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- W2756768969 abstract "In the context of the development of silicon photonics, various Ti- and Ni-based alloyed metallizations have been investigated for the purpose of forming low resistivity and Si CMOS-compatible contacts to n-InP. The innovative Ni <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> P metallization combined with an in situ Ar <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>+</sup> preclean represents the most suitable available solution for the formation of ohmic contacts with a specific contact resistivity as low as 4.3 × 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-6</sup> Ω.cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> on such a semiconductor. The latter additionally presents the advantage of being stable at least up to 350 °C and could therefore withstand additional integration processes conducted at this temperature." @default.
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- W2756768969 date "2017-11-01" @default.
- W2756768969 modified "2023-10-16" @default.
- W2756768969 title "CMOS-Compatible Contacts to n-InP" @default.
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- W2756768969 doi "https://doi.org/10.1109/ted.2017.2747619" @default.
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