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• W2756985533 endingPage "10PF17" @default.
• W2756985533 startingPage "10PF17" @default.
• W2756985533 abstract "Recently, new functionalities of ferroelectric domain walls (DWs) have attracted much attention. To realize novel devices using the functionalities of the DWs, techniques to introduce the DWs at arbitrary positions in the ferroelectric thin films are necessary. In this study, we have demonstrated the introduction of the DWs at arbitrary positions in epitaxial BiFeO3 (BFO) thin films using the patterned surface of the SrTiO3 (STO) single-crystal substrate. On the slope pattern of the STO surface, the in-plane orientation of BFO has changed because the in-plane orientation of BFO can be controlled by the step propagation direction of the patterned surface. From the piezoresponse scanning force microscopy and X-ray diffraction reciprocal space mapping results, charged 109° DWs have been introduced into the BFO thin film at the bottom and top of the slope pattern of the STO surface. In addition, the conductivity modulation of the positively charged DW has been observed by current-sensitive atomic force microscopy imaging." @default.
• W2756985533 created "2017-10-06" @default.
• W2756985533 creator A5042614333 @default.
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• W2756985533 date "2017-09-27" @default.
• W2756985533 modified "2023-09-23" @default.
• W2756985533 title "Domain structure of BiFeO₃thin films grown on patterned SrTiO₃(001) substrates" @default.
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• W2756985533 doi "https://doi.org/10.7567/jjap.56.10pf17" @default.
• W2756985533 hasPublicationYear "2017" @default.
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