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- W2757057665 abstract "Local heating happens faster than chip-wide thermal spikes. This can cause performance and reliability issues in high density ICs. This type of thermal effect is critical in subthreshold circuit designs. To mitigate the thermal effect, we are employing a new nodal thermal management scheme by utilizing a new multi-Vt transistor. Many circuits are implemented using multi-Vt transistors to minimize leakage power and thermal effect while optimizing delay. In this paper, we present multi-Vt circuit design using our recently proposed Silicon on ferroelectric insulator FET (SOFFET) based circuits. SOFFET has shown tremendous potential for various ultra-low-power (ULP) applications. In addition, it provides high-performance multi-Vt design, strong threshold voltage control, lower supply voltage, sub-60mV/decade operation, higher current drive, and better short-channel characteristics. The flexibility to control the threshold voltage via back gate has created tremendous interest in double-gated SOFFETs for nodal thermal control and next generation high speed and low power IC designs." @default.
- W2757057665 created "2017-10-06" @default.
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- W2757057665 date "2017-05-01" @default.
- W2757057665 modified "2023-09-29" @default.
- W2757057665 title "Nodal thermal analysis for multi-VT SOFFET based subthreshold circuits" @default.
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- W2757057665 doi "https://doi.org/10.1109/iscas.2017.8050826" @default.
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