Matches in SemOpenAlex for { <https://semopenalex.org/work/W2758962761> ?p ?o ?g. }
Showing items 1 to 71 of
71
with 100 items per page.
- W2758962761 abstract "Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The integration of optoelectronic components on the CMOS platform has long been limited due to the unavailability of Si-based laser sources. A Si-based monolithic laser is highly desirable for full integration of Si photonics chip. In this work, Si-based germanium-tin (GeSn) lasers have been demonstrated as direct bandgap group-IV laser sources. This opens a completely new avenue from the traditional III-V integration approach. In this work, the material and optical properties of GeSn alloys were comprehensively studied. The GeSn films were grown on Ge-buffered Si substrates in a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. A systematic study was done for thin GeSn films (thickness 400 nm) with Sn composition 5 to 17.5%. The room temperature photoluminescence (PL) spectra were measured that showed a gradual shift of emission peaks towards longer wavelength as Sn composition increases. Strong PL intensity and low defect density indicated high material quality. Moreover, the PL study of n-doped samples showed bandgap narrowing compared to the unintentionally p-doped (boron) thin films with similar Sn compositions. Finally, optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 μm were demonstrated using high-quality GeSn films with Sn compositions up to 17.5%. The achieved maximum Sn composition of 17.5% broke the acknowledged Sn incorporation limit using similar deposition chemistry. The highest lasing temperature was measured at 180 K with an active layer thickness as thin as 270 nm. The unprecedented lasing performance is due to the achievement of high material quality and a robust fabrication process. The results reported in this work show a major advancement towards Si-based electrically pumped mid-infrared laser sources for integrated photonics." @default.
- W2758962761 created "2017-10-06" @default.
- W2758962761 creator A5072029067 @default.
- W2758962761 date "2017-01-01" @default.
- W2758962761 modified "2023-09-23" @default.
- W2758962761 title "Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications" @default.
- W2758962761 cites W1970051648 @default.
- W2758962761 cites W2096364868 @default.
- W2758962761 hasPublicationYear "2017" @default.
- W2758962761 type Work @default.
- W2758962761 sameAs 2758962761 @default.
- W2758962761 citedByCount "0" @default.
- W2758962761 crossrefType "journal-article" @default.
- W2758962761 hasAuthorship W2758962761A5072029067 @default.
- W2758962761 hasConcept C108225325 @default.
- W2758962761 hasConcept C120665830 @default.
- W2758962761 hasConcept C121332964 @default.
- W2758962761 hasConcept C181966813 @default.
- W2758962761 hasConcept C191897082 @default.
- W2758962761 hasConcept C192562407 @default.
- W2758962761 hasConcept C20788544 @default.
- W2758962761 hasConcept C49040817 @default.
- W2758962761 hasConcept C520434653 @default.
- W2758962761 hasConcept C525849907 @default.
- W2758962761 hasConcept C544956773 @default.
- W2758962761 hasConcept C550623735 @default.
- W2758962761 hasConcept C57410435 @default.
- W2758962761 hasConcept C57863236 @default.
- W2758962761 hasConcept C85080765 @default.
- W2758962761 hasConceptScore W2758962761C108225325 @default.
- W2758962761 hasConceptScore W2758962761C120665830 @default.
- W2758962761 hasConceptScore W2758962761C121332964 @default.
- W2758962761 hasConceptScore W2758962761C181966813 @default.
- W2758962761 hasConceptScore W2758962761C191897082 @default.
- W2758962761 hasConceptScore W2758962761C192562407 @default.
- W2758962761 hasConceptScore W2758962761C20788544 @default.
- W2758962761 hasConceptScore W2758962761C49040817 @default.
- W2758962761 hasConceptScore W2758962761C520434653 @default.
- W2758962761 hasConceptScore W2758962761C525849907 @default.
- W2758962761 hasConceptScore W2758962761C544956773 @default.
- W2758962761 hasConceptScore W2758962761C550623735 @default.
- W2758962761 hasConceptScore W2758962761C57410435 @default.
- W2758962761 hasConceptScore W2758962761C57863236 @default.
- W2758962761 hasConceptScore W2758962761C85080765 @default.
- W2758962761 hasLocation W27589627611 @default.
- W2758962761 hasOpenAccess W2758962761 @default.
- W2758962761 hasPrimaryLocation W27589627611 @default.
- W2758962761 hasRelatedWork W1516292190 @default.
- W2758962761 hasRelatedWork W1541131317 @default.
- W2758962761 hasRelatedWork W1562832 @default.
- W2758962761 hasRelatedWork W1954444034 @default.
- W2758962761 hasRelatedWork W1967614796 @default.
- W2758962761 hasRelatedWork W1988344574 @default.
- W2758962761 hasRelatedWork W2005743391 @default.
- W2758962761 hasRelatedWork W2119448486 @default.
- W2758962761 hasRelatedWork W2148808468 @default.
- W2758962761 hasRelatedWork W2168622579 @default.
- W2758962761 hasRelatedWork W2388024216 @default.
- W2758962761 hasRelatedWork W2409508301 @default.
- W2758962761 hasRelatedWork W2800668284 @default.
- W2758962761 hasRelatedWork W2807286893 @default.
- W2758962761 hasRelatedWork W2957270897 @default.
- W2758962761 hasRelatedWork W2998857386 @default.
- W2758962761 hasRelatedWork W3099452240 @default.
- W2758962761 hasRelatedWork W3133502457 @default.
- W2758962761 hasRelatedWork W3144894411 @default.
- W2758962761 hasRelatedWork W75018640 @default.
- W2758962761 isParatext "false" @default.
- W2758962761 isRetracted "false" @default.
- W2758962761 magId "2758962761" @default.
- W2758962761 workType "article" @default.