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• W2760242007 abstract "Graphene (Gr) is currently one of the most appealing materials as conductive transparent electrode for flexible electronics, thanks to its bendability/stretchability accompanied by small variations of the electrical properties after mechanical deformations. In addition, the field-effect tunable carrier density combined to a high mobility and saturation velocity make it an excellent channel material for field-effect transistors (FETs) even on flexible substrates. By proper design of the device structure (channel length, top- or back-gate configuration), Gr-FETs can be used for high-frequency (RF) electronics or for high-sensitivity chemical, biological, and environmental sensors exploiting transconductance variations in response to the chemi/physisorption of molecular species on Gr channel. In particular, miniaturized and flexible Gr-FET sensors can represent a strong advance with respect to current sensors technology and will be extremely useful for “in situ” applications. Here we report a wafer scale and semiconductor fab compatible processing strategy to fabricate arrays of Gr-FETs on a PEN substrate, adopting a local back-gate configuration, with a thin Al2O3 gate dielectric film deposited at low temperature (100 °C) by plasma-assisted Atomic Layer Deposition (ALD) and transfer of large-area Gr grown by chemical vapor deposition on copper foils. Electrical characterization of the fabricated devices is presented and their suitability for solid ion sensing FET (IS-FET) applications is discussed." @default.
• W2760242007 created "2017-10-06" @default.
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• W2760242007 date "2017-01-01" @default.
• W2760242007 modified "2023-09-22" @default.
• W2760242007 title "Advances in the Fabrication of Large-Area Back-Gated Graphene Field-Effect Transistors on Plastics: Platform for Flexible Electronics and Sensing" @default.
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• W2760242007 doi "https://doi.org/10.1007/978-3-319-58134-7_9" @default.
• W2760242007 hasPublicationYear "2017" @default.
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