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• W2761496000 endingPage "108201" @default.
• W2761496000 startingPage "108201" @default.
• W2761496000 abstract "The growth process of GeOx films formed by plasma post-oxidation (PPO) at room temperature (RT) is investigated using angle-resolved x-ray photoelectron spectroscopy (AR-XPS). The experimental results show that the distributions of the Ge4+ states, a mixture of the Ge2+ and Ge3+ states, and the Ge+1 states are localized from the GeOx surface to the GeOx/Ge interface. Moreover, the Ge+1 states are predominant when the two outermost layers of Ge atoms are oxidized. These findings are helpful for establishing in-depth knowledge of the growth mechanism of the GeOx layer and valuable for the optimization of Ge-based gate stacks for future complementary metal–oxide–semiconductor (MOS) field-effect transistor (CMOSFET) devices." @default.
• W2761496000 created "2017-10-20" @default.
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• W2761496000 date "2017-09-01" @default.
• W2761496000 modified "2023-09-25" @default.
• W2761496000 title "Angle-resolved x-ray photoelectron spectroscopy study of GeO _<i>x</i> growth by plasma post-oxidation" @default.
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• W2761496000 doi "https://doi.org/10.1088/1674-1056/26/10/108201" @default.
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