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- W2761904879 abstract "As it was mentioned in the introduction, one possibility to continue with CMOS scaling is the substitution of the Si channel with high mobility semiconductors, such as III–V materials." @default.
- W2761904879 created "2017-10-20" @default.
- W2761904879 creator A5033938581 @default.
- W2761904879 date "2017-01-01" @default.
- W2761904879 modified "2023-10-02" @default.
- W2761904879 title "Gd2O3 on InP Substrates" @default.
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- W2761904879 doi "https://doi.org/10.1007/978-3-319-66607-5_8" @default.
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