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- W2762439722 endingPage "1700298" @default.
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- W2762439722 abstract "Transparent p-type CuI layers with high hole mobility can be fabricated on flexible plastic sheets, a system which has been unattainable with p-type transparent oxide semiconductors. Mildly heat-treated CuI layers have mobilities of ≈20 cm2 V−1 s−1, which are comparable to those of p-type GaN epilayers. Highly transparent p–n diodes with sufficient rectification ratio (106) can be manufactured by employing a heterojunction of p-type CuI and amorphous n-type In-Ga-Zn-O layers on plastic sheets. Thus, CuI can be regarded as an excellent transparent p-type semiconductor for flexible transparent electronics." @default.
- W2762439722 created "2017-10-20" @default.
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- W2762439722 date "2017-10-10" @default.
- W2762439722 modified "2023-10-16" @default.
- W2762439722 title "High-Mobility Transparent p-Type CuI Semiconducting Layers Fabricated on Flexible Plastic Sheets: Toward Flexible Transparent Electronics" @default.
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- W2762439722 doi "https://doi.org/10.1002/aelm.201700298" @default.
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