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- W2762859909 endingPage "1047" @default.
- W2762859909 startingPage "1047" @default.
- W2762859909 abstract "The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit bricks in integrated circuits (ICs) have constantly changed during the past five decades. The driving force for such scientific and technological development is to reduce the production price, power consumption and faster carrier transport in the transistor channel. Therefore, many challenges and difficulties have been merged in the processing of transistors which have to be dealed and solved. This article highlights the transition from 2D planar MOSFETs to 3D fin field effective transistors (FinFETs) and then presents how the process flow faces different technological challenges. The discussions contain nano-scaled patterning and process issues related to gate and (source/drain) S/D formation as well as integration of III-V materials for high carrier mobility in channel for future FinFETs." @default.
- W2762859909 created "2017-10-20" @default.
- W2762859909 creator A5031004784 @default.
- W2762859909 creator A5031209470 @default.
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- W2762859909 creator A5064918194 @default.
- W2762859909 creator A5066304849 @default.
- W2762859909 creator A5077177380 @default.
- W2762859909 date "2017-10-13" @default.
- W2762859909 modified "2023-10-02" @default.
- W2762859909 title "The Challenges of Advanced CMOS Process from 2D to 3D" @default.
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