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• W2763783725 abstract "Nb <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sub> -based metal-insulator-metal (MIM) diodes are ideal for neuromorphic computing applications because they exhibit desirable rectification, hysteresis, and capacitance characteristics without electroforming. We employ capacitance-frequency measurements to evaluate the total-ionizing-dose res- ponse of these devices to avoid measurement-induced disturbance of trap distributions caused by typical gate-voltage sweeping methods. Power-law dependences are observed for the low-frequency capacitance and conductance, consistent with hopping conduction of carriers through the oxides. Despite their high oxygen-vacancy densities, the Nb <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sub> -based MIM diodes are radiation tolerant up to at least Mrad(SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ) doses." @default.
• W2763783725 created "2017-10-20" @default.
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• W2763783725 date "2018-01-01" @default.
• W2763783725 modified "2023-10-16" @default.
• W2763783725 title "Total-Ionizing-Dose Response of Nb₂O₅-Based MIM Diodes for Neuromorphic Computing Applications" @default.
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• W2763783725 doi "https://doi.org/10.1109/tns.2017.2761904" @default.
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