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• W2763852052 abstract "(GaN)1–x(ZnO)x (GZNO) is a visible-light absorber of interest for solar-driven water splitting. Here, n-type doping of the GZNO solid solution by cation substitution with group IV elements Sn and Si is reported for the first time, which was achieved by nitriding ZnGa-layered double hydroxides with SnO2 or SiO2 colloids. Characterization of Si-(15 at. %, metals basis) and Sn-(3 and 4 at. %) doped analogues of GZNO revealed the formation of solid solutions, which crystallize into a wurtzite-type structure. The local structure of the Sn dopants was investigated by X-ray absorption spectroscopy which was confirmed to be a Sn(IV) center in a 4-coordinated tetrahedral environment. Structural and spectroscopic analyses were suggestive that Si and Sn are both shallow donors in GZNO. Thus, doping of GZNO with group IV elements provides a potential handle to tune the carrier transport properties of GZNO for photoelectrochemical devices." @default.
• W2763852052 created "2017-10-20" @default.
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• W2763852052 date "2017-10-09" @default.
• W2763852052 modified "2023-10-14" @default.
• W2763852052 title "<i>n</i>-Type Doping of Visible-Light-Absorbing (GaN)_1–<i>x</i>(ZnO)_<i>x</i> with Aliovalent Sn/Si Substitutions" @default.
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• W2763852052 doi "https://doi.org/10.1021/acs.jpcc.7b08304" @default.
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