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- W2765117566 abstract "Abstract In this paper, we have studied the structural and electronic properties of vacancy charged defects in the graphene phase (honeycomb type) of gallium nitride (g-GaN) by using first-principle calculations within the framework of the Density Functional Theory. It is found that the vacancies introduce defect levels in the band gap, and these generate a total magnetization in the g-GaN system. The formation energy with different charge states for the vacancies of gallium and nitrogen were calculated, obtaining higher energies than the GaN wurtzite phase (w-GaN). Furthermore, nitrogen vacancies were found to be more stable than gallium vacancies in a whole range of electronic chemical potential. Finally, gallium and nitrogen vacancies produce a nonzero magnetic moment in g-GaN, making it a potential candidate for future spintronics applications." @default.
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- W2765117566 date "2018-03-01" @default.
- W2765117566 modified "2023-10-12" @default.
- W2765117566 title "Vacancy charged defects in two-dimensional GaN" @default.
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- W2765117566 doi "https://doi.org/10.1016/j.apsusc.2017.10.136" @default.
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