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- W2765509023 abstract "Fabricated InAs/Si and InAs/GaAsSb vertical nanowire tunnel FETs are analyzed by physics-based TCAD with emphasis on the impact of hetero-junction and oxide-interface traps on their performance. After careful fitting of a minimum set of parameters, the effects of diameter scaling and gate alignment are predicted. Trap-assisted tunneling at the oxide interface is suppressed by scaling the diameter into the volume-inversion regime. Gate alignment steepens the slope and increases the ON-current. The ‘trap-tolerant’ device geometry can result in a small sub-threshold swing despite commonly present trap concentrations." @default.
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- W2765509023 date "2017-09-01" @default.
- W2765509023 modified "2023-09-27" @default.
- W2765509023 title "The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs" @default.
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- W2765509023 doi "https://doi.org/10.23919/sispad.2017.8085317" @default.
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