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• W2766110693 abstract "In this paper, we presents the effect of higher back plane doping on analog figure of merit of fully depleted-silicon on insulator (FD-SOI) MOSFETs at RF frequencies. Procedure for DC and RF parameter extraction at RF frequencies has been discussed. Surface potential based Industry standard BSIM-IMG model for FD-SOI MOSFETs with enhanced gate parasitic network is used for validation of extracted DC and RF parameters such as gate resistance, gate parasitic capacitance, output conductance, transconductance." @default.
• W2766110693 created "2017-11-10" @default.
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• W2766110693 date "2016-12-01" @default.
• W2766110693 modified "2023-09-27" @default.
• W2766110693 title "Impact of back plane doping on RF performance of FD-SOI transistor" @default.
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• W2766110693 doi "https://doi.org/10.1109/icemelec.2016.8074584" @default.
• W2766110693 hasPublicationYear "2016" @default.
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