FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2766435126> ?p ?o ?g. }

• W2766435126 abstract "Mask Defect Verification Using Actinic Inspection and Defect Mitigation Technology Sungmin Huh 1, Patrick Kearney1, Stefan Wurm 1, Frank Goodwin 1, Kenneth Goldberg2, Iacopo Mochi2, Eric GuIIikson 2 1SEMATECH 255 Fuller Road, Suite 309, Albany, NY 12203 USA 2 2-400, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 ABSTRACT The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing. The successful production of defect-free masks will depend on the timely development of defect inspection tools, including both mask blank inspection tools and absorber pattern inspection tools to meet the 22 nm half-pitch node. EUV mask blanks with embedded phase defects were inspected with a reticle actinic inspection tool (AIT) and the Lasertec M7360. The Lasertec M7360 is operated at SEMA TECH's Mask blank Development Center (MBDC) in Albany, with sensitivity to multilayer defects down to 40-45 nm, which is not likely sufficient for mask blank development below the 32 nm half-pitch node. Phase defect printability was simulated to calculate the required defect sensitivity for the next generation blank inspection tool to support reticle development for the sub-32 nm half-pitch technology node. This paper will also discuss the kind of infrastructure that will be required in the development and mass production stages. Keywords: EUV, mask, phase defect, DUV inspection, actinic inspection 1. INTRODUCTION Over the past year, the interest by leading edge chip manufacturers has tangibly shifted towards the insertion of extreme ultraviolet lithography (EUVL) into production. This emphasis is increasing the pressure to overcome the lack of defect- free blanks, which remains one of the key challenges impeding the insertion of EUVL into manufacturing. The success of the industry'S mask blank defect reduction effort critically depends on the timely availability of inspection tools that can precisely and reliably find ever smaller defects. SEMA TECH's Mask Blank Development Center (MBDC) facility has provided the world's best defect inspection capability starting in 2003 with the Lasertech M1350 tool, followed by the second generation defect inspection tool, the M7360, in 2006. Both tools use deep ultraviolet (DUV) light sources for defect detection: the 488 nm wavelength for the M1350 and 266 nm wavelength for the M7360. However, to meet high volume manufacturing (HVM) requirements for sub-32 nm half-pitch (HP) patterning, the industry needs a third generation of defect inspection tools capable of finding defects :s: 20 nm on mask blanks with a high capture rate and high blank throughput. In addition, these tools will also need to support extendibility assessments of low defect deposition technologies and the associated infrastructure development towards meeting 22 nm HP defect specifications. SEl1A TECH operates the actinic inspection tool (AIT) at Lawrence Berkeley National Lab (LBNL) and a state of the art Lasertec M7360 to support the development of inspection tools and reticle blanks to eventually meet HVM requirements. In this paper, we simulated the required defect sensitivity for sub-32 nm HP [1-3] and have prepared an EUV mask blank, fabricated in SEMATECH's MBDC, to be inspected using the M7360 in the MBDC and the AIT at LBNL to compare the sensitivity of these tools. We prepared a mask blank with a real phase defect and then compared the detected image using the M7360 and AIT to explain why we need an actinic inspection tool for the mass production of EUV mask blanks. Most of the cost of ownership (COO) of EUV masks depends on the defect-free mask blank cost. Consequently, defect mitigation technology using mask blanks with some phase defects should be developed to reduce mask blankcosts during mass production. In this paper, we identif)' what is needed for defect mitigation technology and propose possible defect inspection scheme for EUV pilot line applications [4]." @default.
• W2766435126 created "2017-11-10" @default.
• W2766435126 creator A5010301500 @default.
• W2766435126 date "2009-06-17" @default.
• W2766435126 modified "2023-09-24" @default.
• W2766435126 title "Mask defect verification using actinic inspection and defect mitigation technology - eScholarship" @default.
• W2766435126 hasPublicationYear "2009" @default.
• W2766435126 type Work @default.
• W2766435126 sameAs 2766435126 @default.
• W2766435126 citedByCount "0" @default.
• W2766435126 crossrefType "journal-article" @default.
• W2766435126 hasAuthorship W2766435126A5010301500 @default.
• W2766435126 hasConcept C105487726 @default.
• W2766435126 hasConcept C120665830 @default.
• W2766435126 hasConcept C121332964 @default.
• W2766435126 hasConcept C127413603 @default.
• W2766435126 hasConcept C146024833 @default.
• W2766435126 hasConcept C146617872 @default.
• W2766435126 hasConcept C160671074 @default.
• W2766435126 hasConcept C162996421 @default.
• W2766435126 hasConcept C192562407 @default.
• W2766435126 hasConcept C204223013 @default.
• W2766435126 hasConcept C2778089247 @default.
• W2766435126 hasConcept C41008148 @default.
• W2766435126 hasConcept C49040817 @default.
• W2766435126 hasConcept C520434653 @default.
• W2766435126 hasConcept C62611344 @default.
• W2766435126 hasConcept C66938386 @default.
• W2766435126 hasConcept C78519656 @default.
• W2766435126 hasConceptScore W2766435126C105487726 @default.
• W2766435126 hasConceptScore W2766435126C120665830 @default.
• W2766435126 hasConceptScore W2766435126C121332964 @default.
• W2766435126 hasConceptScore W2766435126C127413603 @default.
• W2766435126 hasConceptScore W2766435126C146024833 @default.
• W2766435126 hasConceptScore W2766435126C146617872 @default.
• W2766435126 hasConceptScore W2766435126C160671074 @default.
• W2766435126 hasConceptScore W2766435126C162996421 @default.
• W2766435126 hasConceptScore W2766435126C192562407 @default.
• W2766435126 hasConceptScore W2766435126C204223013 @default.
• W2766435126 hasConceptScore W2766435126C2778089247 @default.
• W2766435126 hasConceptScore W2766435126C41008148 @default.
• W2766435126 hasConceptScore W2766435126C49040817 @default.
• W2766435126 hasConceptScore W2766435126C520434653 @default.
• W2766435126 hasConceptScore W2766435126C62611344 @default.
• W2766435126 hasConceptScore W2766435126C66938386 @default.
• W2766435126 hasConceptScore W2766435126C78519656 @default.
• W2766435126 hasLocation W27664351261 @default.
• W2766435126 hasOpenAccess W2766435126 @default.
• W2766435126 hasPrimaryLocation W27664351261 @default.
• W2766435126 hasRelatedWork W1527803421 @default.
• W2766435126 hasRelatedWork W1978995707 @default.
• W2766435126 hasRelatedWork W1990309316 @default.
• W2766435126 hasRelatedWork W1990904913 @default.
• W2766435126 hasRelatedWork W2001383366 @default.
• W2766435126 hasRelatedWork W2009433659 @default.
• W2766435126 hasRelatedWork W2010148796 @default.
• W2766435126 hasRelatedWork W2020764220 @default.
• W2766435126 hasRelatedWork W2037070238 @default.
• W2766435126 hasRelatedWork W2047514005 @default.
• W2766435126 hasRelatedWork W2068835668 @default.
• W2766435126 hasRelatedWork W2094629726 @default.
• W2766435126 hasRelatedWork W2130217762 @default.
• W2766435126 hasRelatedWork W2175611639 @default.
• W2766435126 hasRelatedWork W2333627698 @default.
• W2766435126 hasRelatedWork W2515884158 @default.
• W2766435126 hasRelatedWork W2598188990 @default.
• W2766435126 hasRelatedWork W2765809437 @default.
• W2766435126 hasRelatedWork W2894908607 @default.
• W2766435126 hasRelatedWork W2895323754 @default.
• W2766435126 isParatext "false" @default.
• W2766435126 isRetracted "false" @default.
• W2766435126 magId "2766435126" @default.
• W2766435126 workType "article" @default.