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• W2766629859 abstract "We report the state-of-the-art V-band power performance of a scaled 40-nm gate length Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.23</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.77</sub> N/AlN/GaN/Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.08</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.92</sub> N double heterojunction field effect transistor (DHFET). The 200 μm (4 × 50 μm) wide GaN DHFETs pre-matched for V-band (57-64 GHz) have demonstrated an output power of 376 mW (1.88 W/mm) with 48% power-added efficiency (PAE), 57% drain efficiency, and more than 8 dB of associated gain measured at a frequency of 59 GHz. These results represent to the best of our knowledge the best combination of power and PAE reported to date at this frequency for a solid-state device. These results were achieved through optimization of the GaN heterostructure, which incorporates a low aluminum content back-barrier for electron confinement through polarization effects, a vertically scaled Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.23</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.77</sub> N/AlN gate barrier stack for minimization of short-channel effects, and a selective n+ GaN ohmic re-growth process by molecular beam epitaxy for reduction of parasitic resistance." @default.
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• W2766629859 date "2017-12-01" @default.
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• W2766629859 title "GaN DHFETs Having 48% Power Added Efficiency and 57% Drain Efficiency at $V$ -Band" @default.
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• W2766629859 doi "https://doi.org/10.1109/led.2017.2763940" @default.
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