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- W2766704589 abstract "Over the past decades, one-dimensional (1D) semiconductor nanostructures have drawn great interest since the proposed of vapour-liquid-solid (VLS) growth mechanism into the synthesis of 1D nanostructures. III-V compound semiconductor nanostructures exhibit exceptional electrical and optical properties. With a broad range of composition and band structure selection, III-V semiconductor nanostructures are the critical components in a wide range of potential nanoscale device applications. To fully exploit these 1D III-V semiconductor nanostructures, particularly nanowires, extensive research has been made on growth control of 1D nanoscale building blocks, and integration of these nanowire elements into complex functional architectures in past decades. Nevertheless, there are still challenges in III-V nanowires control, such as size, shape and crystal quality. Metal-organic chemical vapour deposition (MOCVD) is one of the most precise and growth techniques to grow III-V semiconductor nanowires. There are a series of growth parameters that can be altered in a MOCVD growth chamber, such as temperature and absolute flow rate of both group-III and group-V precursors (corresponding to V/III ratio). By tuning these parameters carefully, nanowires with controlled morphologies and crystal structures can be obtained. Due to the dimensionality of nanowires, advanced electron microscopy characterisation is demanded to better understand the growth mechanism of nanowires. Most of the research works have been done focusing on the effects of growth parameters on the growth of III-V nanowires. However, there is insufficient attention has been paid to explore the effects of catalysts, in which the catalyst play an important role in the nucleation and growth of nanowires. Besides, most of the works dedicated to the Au-catalysed III-V nanowires growth via VLS or vapour-solid-solid (VSS) mechanisms. Little work has been done on the nanowires growth mediated by non-Au metal catalysts. The objective of this thesis is to understand the effects of catalysts in the epitaxial III-V nanowire growth. A systematic study of controlled growth of III-V nanowires using both Au and non-Au metal catalysts has been conducted. The morphological, structural and chemical characteristics of the III-V nanowires and their respective catalysts were investigated by advanced electron microscopy. The findings of this thesis will provide insights to elucidate the significant role of catalysts and the growth mechanism involved, which is extremely crucial to design reliable and high-quality III-V nanowires-based devices." @default.
- W2766704589 created "2017-11-10" @default.
- W2766704589 creator A5000199742 @default.
- W2766704589 date "2017-10-27" @default.
- W2766704589 modified "2023-09-27" @default.
- W2766704589 title "Understand the effects of catalysts in the epitaxial III-V nanowire growth" @default.
- W2766704589 cites W638892291 @default.
- W2766704589 doi "https://doi.org/10.14264/uql.2017.938" @default.
- W2766704589 hasPublicationYear "2017" @default.
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