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• W2766708312 abstract "Epitaxial NiO thin films were grown on single crystal substrates of m-plane (101¯0), a-plane (1¯1¯20), c-plane (0001), and r-plane (11¯02) sapphires by ion beam sputtering of a Ni metal target in a mixed argon and oxygen atmosphere. X-ray measurements indicate that the NiO grows epitaxially on all substrates, with its orientation dependent on the cut of the sapphire substrate. The growth mode is the Stranski–Krastanov mode. (110)-oriented NiO grows on m-plane sapphire, while (111)-oriented NiO films are found on both the a-plane and c-plane sapphire. The orientation of NiO found on r-plane sapphire is found to be surface and temperature dependent but is mainly given by (110)-oriented grains. Thus, thin NiO films on c-plane and a-plane substrates are best suited to serve as antiferromagnetic pinning layers in magneto-electronic devices." @default.
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• W2766708312 date "2017-11-03" @default.
• W2766708312 modified "2023-10-01" @default.
• W2766708312 title "NiO films on sapphire as potential antiferromagnetic pinning layers" @default.
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• W2766708312 doi "https://doi.org/10.1063/1.4991601" @default.
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