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- W2766796456 abstract "This paper reviews advanced gate dielectric processes for SiC MOSFETs. The poor quality of the SiO2/SiC interface severely limits the value of the channel field-effect mobility, especially in 4H-SiC MOSFETs. Several strategies have been addressed to overcome this issue. Nitridation methods are effective in increasing the channel mobility and have been adopted by manufacturers for the first generations of commercial power devices. Gate oxide doping techniques have also been successfully implemented to further increase the channel mobility, although device stability is compromised. The use of high-k dielectrics is also analyzed, together with the impact of different crystal orientations on the channel mobility. Finally, the performance of SiC MOSFETs in harsh environments is also reviewed with special emphasis on high temperature operation." @default.
- W2766796456 created "2017-11-10" @default.
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- W2766796456 date "2018-05-01" @default.
- W2766796456 modified "2023-10-17" @default.
- W2766796456 title "Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review" @default.
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- W2766796456 doi "https://doi.org/10.1016/j.mssp.2017.10.030" @default.
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