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• W2767020007 startingPage "24495" @default.
• W2767020007 abstract "The point defects in ZnO nanorods (NRs) play a very crucial role in its photoconductivity (PC) properties, and thus it is essential to understand the sub-band gap carrier dynamics in order to have efficient ultraviolet (UV) photodetection. In order to understand the role of a dominant point defect, Zn vacancy (VZn), which is prevalent on the surface of the NRs, we employ a high-temperature annealing step in air and also an excess hydration step for one set of annealed NRs, each followed by a final surface passivation step by polyvinyl butyral. A comprehensive study on the photocurrent spectra, photocurrent transients under different sub-band gap excitations, and power dependence of photocurrent of aqueous chemically grown ZnO NRs treated under various conditions has been carried out and demonstrates the superiority (extraordinarily high and fast UV response) of the point defect rich but surface-passivated NRs as compared to ones with no or fewer VZn defects. Further, good support of the major role of VZn has been obtained from the PC results of a set of ZnO NRs treated in excess Zn with a concurrence from the enhanced UV-to-vis ratio. The experimental results in harmony with the reported theoretical calculations reveal that both trapping and/or recombination centers nature of an acceptor-like VZn and their defect complexes are likely to be the most important roles played by the PC. The study offers new insight in understanding the advanced mechanism of PC of ZnO NRs controlled by VZn-related sub-band gap defects." @default.
• W2767020007 created "2017-11-10" @default.
• W2767020007 creator A5025777424 @default.
• W2767020007 creator A5067092432 @default.
• W2767020007 date "2017-10-26" @default.
• W2767020007 modified "2023-10-02" @default.
• W2767020007 title "Toward Understanding the Role of V_Zn Defect on the Photoconductivity of Surface-Passivated ZnO NRs" @default.
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• W2767020007 doi "https://doi.org/10.1021/acs.jpcc.7b06393" @default.
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