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• W2767672057 startingPage "880" @default.
• W2767672057 abstract "Multilevel conductance switching was achieved using silver nanoparticles (Ag NPs) embedded in poly(9-vinylcarbazole) (PVK) with a structure of ITO/PVK:Ag NPs/Al. The current-voltage (I-V) curves of the memory devices at low reading voltages showed three distinguished states of current. The memory devices exhibited non-volatile rewritable memory characteristics. The carrier transport mechanisms of the devices in each state were analyzed by theoretical models based on the experimental I-V data. In addition, retention time measurements showed clearly three current states with good data retention properties. From the retention times test, the average values of ON/OFF, ON/intermediate (INTERM) and INTERM/OFF current ratios of the memory devices were 1.7 × 106, 3.5 × 102 and 5.0 × 103, respectively." @default.
• W2767672057 created "2017-11-17" @default.
• W2767672057 creator A5036814678 @default.
• W2767672057 creator A5061975310 @default.
• W2767672057 creator A5081410238 @default.
• W2767672057 date "2018-01-01" @default.
• W2767672057 modified "2023-10-17" @default.
• W2767672057 title "Multilevel conductance switching and carrier transport mechanisms of memory devices based on an ITO/PVK:Ag nanoparticles/Al structure" @default.
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• W2767672057 doi "https://doi.org/10.1016/j.jallcom.2017.10.197" @default.
• W2767672057 hasPublicationYear "2018" @default.
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