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- W2767816511 abstract "thesis main objective is the design of protection againstelectrostatic discharge (ESD), for deep submicron (DSM)state-of-the-art fully depleted silicon-on-insulator technology (FDSOI).This requires the ESD characterization of existing elementary devicesand design of new FDSOI devices. The detailed characterization of thephysical mechanisms and device performance will be conducted at IMEPwhich has adequate facilities and scientific competence in this field.It will then be necessary to make choices for ESD protectionstrategies based on circuit applications by STMicroelectronics. Anambitious approach aims to develop novel SOI components used for ESDprotection. This part of the work will be performed under theresponsibility of IMEP as it has has recently invented and publishedseveral types of revolutionary transistors Z 2-FET, TFET andBET-FET. It will be necessary to understand the fabrication processtechnology of STMicroelectronics. In this framework, 3D simulation ofthe technology will be performed on TCAD software for 28nm FDSOI andfuture technologies. Physical simulation, with TCAD tools of thesemiconductor will be used to study more precisely the behavior of theelementary devices of ESD protection. Collaboration with the IMEP isessential for the identification and analysis of the physicalmechanisms governing device operation.In particular, the main objective is to integrate ESD protection andevaluate its effectiveness and design. It will also be possible toperform mixed-mode simulation to better analyse the effects of the 3Dstructure (corner effects, depolarization of substrate) and evaluatethe influence of trigger circuits associated with this protection.Optimizing the implementation of ESD protection will then be possible.Having studied from a theoretical point of view and numericalsimulation, ESD protection cells and trigger circuits associated withthe ESD protection strategy, qualification on silicon will be applied.This will be done by a test vehicle in the chosen SOI technology, andelectrical characterization of the structures and protection networkswill follow. Finally, the ESD performance will be analyzed to provideoptimization of the design and the choice of ESD protection strategybased on targeted applications." @default.
- W2767816511 created "2017-11-17" @default.
- W2767816511 creator A5039184228 @default.
- W2767816511 date "2017-01-17" @default.
- W2767816511 modified "2023-09-26" @default.
- W2767816511 title "Conception, fabrication and characterization of new advanced FDSOI devices for ESD robustness and performance" @default.
- W2767816511 hasPublicationYear "2017" @default.
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