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• W2767949969 startingPage "1074" @default.
• W2767949969 abstract "Saving energy and reducing operation parameter fluctuations remain crucial for enabling resistive random access memory (RRAM) to emerge as a universal memory. In this work, we report a resistive memory device based on an amorphous MgO (a-MgO) film that not only exhibits ultralow programming voltage (just 0.22 V) and low power consumption (less than 176.7 μW) but also shows excellent operative uniformity (the coefficient of variation is only 1.7% and 2.2% for SET and RESET voltage, respectively). Moreover, it also shows a forming-free characteristic. Further analysis indicates that these distinctive properties can be attributed to the unstable local structures and the rough surface of the Mg-deficient a-MgO film. These findings show the potential of using a-MgO in high-performance nonvolatile memory applications." @default.
• W2767949969 created "2017-11-17" @default.
• W2767949969 creator A5018007341 @default.
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• W2767949969 date "2018-03-01" @default.
• W2767949969 modified "2023-10-17" @default.
• W2767949969 title "Low-power, high-uniform, and forming-free resistive memory based on Mg-deficient amorphous MgO film with rough surface" @default.
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• W2767949969 doi "https://doi.org/10.1016/j.apsusc.2017.11.026" @default.
• W2767949969 hasPublicationYear "2018" @default.
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