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- W2768023114 abstract "An investigation between Wide Band Gap (WBG) transistors and silicon (Si) transistorswere performed to investigate characteristics, materials, and best practiceusage of different WBG transistors. The investigated WBG transistors were siliconcarbide (SiC) and GaN transistors, but only GaN transistors were used as WBGtransistors since the SiC transistors today are more applicable for high voltage applications.Two small compact dc/dc converters, with Si and gallium nitride (GaN)transistors respectively, were designed and constructed. The main purpose of thethesis was to investigate if WBG transistors had potential for future use in powerelectronic applications. The benefit of WBG transistors is that they can operate athigher switching frequencies and with lower switching losses compared to Si transistors.From the investigation of the WBG transistor it could be concluded that GaNtransistors have a big potential. This is due to that GaN transistors can operate athigher switching frequencies and have smaller designs for almost the same efficiencyas Si transistors." @default.
- W2768023114 created "2017-11-17" @default.
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- W2768023114 date "2017-01-01" @default.
- W2768023114 modified "2023-09-27" @default.
- W2768023114 title "WBG Electronics for Energy-Efficient Power Electronic Applications" @default.
- W2768023114 hasPublicationYear "2017" @default.
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