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• W2769048359 abstract "In this work we report on the elaboration and characterization of Ge 1− x Sn x nanowires synthetized by chemical vapor deposition (CVD) via vapor–liquid–solid (VLS) mechanism using GeH 4 and SnCl 4 as precursors. We have investigated tin incorporation in Ge as a function of experimental growth conditions such as growth temperature and Sn precursor partial pressure ( P SnCl4 / P GeH4 ratio). We have demonstrated Ge 1− x Sn x nanowires with Sn incorporation around 1 at.% in the core with a thin Sn‐rich shell with up to 10 at.% Sn well beyond the equilibrium solubility of Sn in bulk Ge." @default.
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• W2769048359 date "2017-11-22" @default.
• W2769048359 modified "2023-09-27" @default.
• W2769048359 title "Growth of Ge_1−<i>x</i> Sn<i> _x </i> Nanowires by Chemical Vapor Deposition via Vapor-Liquid-Solid Mechanism Using GeH₄ and SnCl₄" @default.
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• W2769048359 doi "https://doi.org/10.1002/pssa.201700743" @default.
• W2769048359 hasPublicationYear "2017" @default.
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