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- W2769321036 abstract "MOSFET devices have, recently, been considered the basic building elementin any electronic IC circuit or system. The great advances achieved by modemtechnologies has made it possible to scale-down considerably the MOSFET device(channel length L smaller than 0.5μm and oxide thickness smaller than 400A) whichappreciably influences the device performance and its operating parameters. [Continues.]" @default.
- W2769321036 created "2017-12-04" @default.
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- W2769321036 date "1996-01-01" @default.
- W2769321036 modified "2023-09-24" @default.
- W2769321036 title "An experimental and theoretical study of the hot-carrier energy distribution in VLSI MOSFETs" @default.
- W2769321036 hasPublicationYear "1996" @default.
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