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• W2769925734 abstract "The 14.1-MeV neutron irradiation- and <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>60</sup> Co- gamma irradiation-produced traps in high-purity semi-insulating (TIPS!) 4TI-SiC photoconductors (PCs) are reported, and the irradiation-induced changes in substrate resistivity, dark current, and UV response of the 4TI-SiC PCs are analyzed. From the zerobias thermally stimulated current measurements, six new traps at the energy levels Ev + 0.58 eV, E <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>v</sub> + 0.68 eV, E <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>v</sub> + (0.7-0.9) eV, E <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>c</sub> - 0.64 eV, Ec - 0.91 eV, and E <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>c</sub> - 1.0 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sup> eV are identified in the 14.1-MeV neutron-irradiated PCs at the fluence of 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>11</sup> n/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> , along the defects already detected before neutron irradiation. The thermal activation energy range (1-1.3 eV) for HPSI 4TI-SiC is unaffected, and no considerable changes in the UV response of the PCs are noticed after the 14.1-MeV neutron irradiation. On the other hand, in addition to the traps determined prior to the irradiation, one new deep hole trap at E <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>v</sub> +1.31 eV and significant changes in the activation energies (1.1-1.35 eV) are observed in the gamma-irradiated PCs at the dose of 100 Mrad, which suggest that the HPSI 4TI-SiC substrate resistivity is increased due to the gamma irradiation-produced traps. Moreover, the signal-to-dark current ratio of the PCs is reduced after the gamma irradiation, as inferred from the UV response of the PCs." @default.
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• W2769925734 date "2018-01-01" @default.
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• W2769925734 title "D–T Neutron and ⁶⁰Co-Gamma Irradiation Effects on HPSI 4H-SiC Photoconductors" @default.
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