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- W2769973663 abstract "Alkylboranes, such as trimethylboron (TMB) and triethylboron (TEB), are promising alternative precursors in low-temperature chemical vapor deposition (CVD) of boron-containing thin films. In this study, CVD growth of B–C films using TMB and quantum-chemical calculations to elucidate a gas phase chemical mechanism were undertaken. Dense, amorphous, boron-rich (B/C = 1.5–3) films were deposited at 1000 °C in both dihydrogen and argon ambients, while films with crystalline B4C and B25C inclusions were deposited at 1100 °C in dihydrogen. A script-based automatization scheme was implemented for the quantum-chemical computations to enable time efficient screening of thousands of possible gas phase CVD reactions. The quantum-chemical calculations suggest TMB is mainly decomposed by an unimolecular α-H elimination of methane, which is complemented by dihydrogen-assisted elimination of methane in dihydrogen." @default.
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- W2769973663 date "2017-11-20" @default.
- W2769973663 modified "2023-09-26" @default.
- W2769973663 title "Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Deposition" @default.
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- W2769973663 doi "https://doi.org/10.1021/acs.jpcc.7b09538" @default.
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