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- W2770070355 abstract "Abstract Tin oxide (SnO2) film with high mobility and good transmittance has been reported as a promising semiconductor material for high performance perovskite solar cells (PSCs). In this study, ultrathin SnO2 film synthesized by radio frequency magnetron sputtering (RFMS) method at room temperature was employed as hole blocking layer for planar PSCs. The room-temperature sputtered SnO2 film not only shows favourable energy band structure but also improves the surface topography of fluorine doped SnO2 (FTO) substrate and perovskite (CH3NH3PbI3) layer. Thus, this SnO2 hole blocking layer can efficiently promote electron transport and suppress carrier recombination. Furthermore, the best efficiency of 13.68% was obtained for planar PSC with SnO2 hole blocking layer prepared at room temperature. This research highlights the room-temperature preparation process of hole blocking layer in PSC and has a certain reference significance for the usage of flexible and low-cost substrates." @default.
- W2770070355 created "2017-12-04" @default.
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- W2770070355 date "2018-03-01" @default.
- W2770070355 modified "2023-10-17" @default.
- W2770070355 title "Room-temperature processed tin oxide thin film as effective hole blocking layer for planar perovskite solar cells" @default.
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- W2770070355 doi "https://doi.org/10.1016/j.apsusc.2017.11.161" @default.
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