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- W2772358192 abstract "The negative-affinity condition means that electrons at the bottom of the conduction band have more energy than free electrons just outside the surface. Such a condition has been obtained on several semiconductors, and is usually achieved by cleaning the surface under high vacuum and treating it with cesium, and sometimes oxygen. The structure of dc forward GaAs p-n junction emitter is shown in Figl, whose p-surface is activated to a state of negative electron affinity (NEA). When the junction is forward biased, electrons are injected into the p-region, as shown in Fig2. They diffuse to the surface and can be emitted into the vacuum.E1H23" @default.
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- W2772358192 date "1994-01-01" @default.
- W2772358192 modified "2023-09-27" @default.
- W2772358192 title "Research of vme photosensitive detector" @default.
- W2772358192 doi "https://doi.org/10.1117/12.2303178" @default.
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