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• W2772477055 abstract "The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient-pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates." @default.
• W2772477055 created "2017-12-22" @default.
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• W2772477055 date "2017-12-08" @default.
• W2772477055 modified "2023-10-17" @default.
• W2772477055 title "Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition" @default.
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• W2772477055 doi "https://doi.org/10.1007/s40820-017-0173-1" @default.
• W2772477055 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/6199066" @default.
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• W2772477055 hasPublicationYear "2017" @default.
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