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• W2774420971 abstract "Nitrogen-rich silicon nitride thin films were produced using plasma-enhanced chemical vapor deposition. Material samples were tested immediately after the deposition process and annealed in argon ambient at 1073 K and 1373 K for 60 min in a resistance furnace. AC measurements of electrical properties were performed at frequency range from 50 Hz to 1 MHz in temperatures from 73 K to 375 K. Frequency and temperature dependences on capacity, conductivity, phase angle, permittivity and dielectric loss factor are presented. Based on those data charge transfer mechanism and dielectric properties were determined." @default.
• W2774420971 created "2017-12-22" @default.
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• W2774420971 date "2017-09-01" @default.
• W2774420971 modified "2023-10-03" @default.
• W2774420971 title "AC measurements and dielectric properties of nitrogen-rich silicon nitride thin films" @default.
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• W2774420971 doi "https://doi.org/10.1109/nap.2017.8190390" @default.
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