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• W2774746294 abstract "Germanium-tin films with rather high Sn content (28.04% and 29.61%) are deposited directly on Si (100) and Si (111) substrates by magnetron sputtering. The mechanism of the effect of rapid thermal annealing on the Sn surface segregation of Ge1 −xSnx films is investigated by x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The x-ray diffraction (XRD) is also performed to determine the crystallinities of the Ge1−xSnx films. The experimental results indicate that root mean square (RMS) values of the annealed samples are comparatively small and have no noticeable changes for the as-grown sample when annealing temperature is below 400 °C. The diameter of the Sn three-dimensional (3D) island becomes larger than that of an as-grown sample when the annealing temperature is 700 °C. In addition, the Sn surface composition decreases when annealing temperature ranges from 400 °C to 700 °C. However, Sn bulk compositions in samples A and B are kept almost unchanged when the annealing temperature is below 600 °C. The present investigation demonstrates that the crystallinity of Ge1−xSnx/Si (111) has no obvious advantage over that of Ge1−xSnx/Si (100) and the selection of Si (111) substrate is an effective method to improve the surface morphologies of Ge1−xSnx films. We also find that more severe Sn surface segregation occurs in the Ge1−xSnx/Si (111) sample during annealing than in the Ge1−xSnx/Si (100) sample." @default.
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• W2774746294 date "2017-12-01" @default.
• W2774746294 modified "2023-09-25" @default.
• W2774746294 title "Effects of rapid thermal annealing on crystallinity and Sn surface segregation of ${mathrm{Ge}}_{1-{boldsymbol{x}}}{mathrm{Sn}}_{{boldsymbol{x}}}$ films on Si (100) and Si (111)" @default.
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• W2774746294 doi "https://doi.org/10.1088/1674-1056/26/12/127306" @default.
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