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- W2774925920 abstract "The molecular beam epitaxy (MBE) of cubic group III-nitrides is a direct way to eliminate polarisation effects which may limit the performance of optoelectronic devices containing quantum well or quantum dot active regions. In this paper, recent progress with the MBE of phase-pure cubic GaN, AlN and their alloys is reviewed. Reflection high-energy electron diffraction (RHEED) has extensively been used to adjust stoichiometric growth conditions allowing severe reduction of the surface roughness of layers and optimisation of the hetero-interfaces and structural quality of multi-layer stacks. The absence of polarisation fields in cubic nitride nanostructures has been demonstrated. The performance of device structures taking advantage of this property like heterojunction field-effect transistors (HFET) with both normally on and normally off characteristics as well as devices to demonstrate inter-subband absorption in the spectral range between 1.55 mm and the terahertz region is summarised." @default.
- W2774925920 created "2017-12-22" @default.
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- W2774925920 date "2013-01-01" @default.
- W2774925920 modified "2023-10-16" @default.
- W2774925920 title "Nonpolar cubic III-nitrides" @default.
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- W2774925920 doi "https://doi.org/10.1016/b978-0-12-387839-7.00011-7" @default.
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