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- W2775086987 abstract "In this study, the threshold voltage and breakdown voltage of a double-channel AlGaN/GaN HEMT is improved. Firstly, depletion mode (D-mode) is changed to enhancement mode (E-mode) by optimizing the depth of the recessed gate, the Al ratio in the AlGaN layer, and the doping concentration of the p-doped region. Secondly, the E-mode device with highest breakdown voltage is selected, and then implemented with an electron-blocking layer (EBL) structure. The EBL structure is optimized to further improve the breakdown voltage." @default.
- W2775086987 created "2017-12-22" @default.
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- W2775086987 date "2017-10-01" @default.
- W2775086987 modified "2023-09-27" @default.
- W2775086987 title "Double-channel E-Mode AlGaN/GaN HEMTs with an electron-blocking-layer structure" @default.
- W2775086987 cites W2012343809 @default.
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- W2775086987 doi "https://doi.org/10.1109/edssc.2017.8126471" @default.
- W2775086987 hasPublicationYear "2017" @default.
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