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• W2775773035 abstract "Time-domain charge pumping, which monitors transient currents during the charge pumping process, is a novel technique for analyzing interface defects of semiconductors. In this paper, we make a brief introduction about our recent works on the development of the time domain charge pumping, aiming at the detailed analysis of metal-oxide-semiconductor interface defects. We in particular show that the time-domain charge pumping enables us to obtain capture cross sections of electrons and holes independently, and to resolve electron-emission spectra into two components with different time constants. It is also shown that it allows us to investigate complicated current flow during the charge pumping process in silicon-on-insulator devices." @default.
• W2775773035 created "2017-12-22" @default.
• W2775773035 creator A5009845987 @default.
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• W2775773035 date "2017-07-01" @default.
• W2775773035 modified "2023-09-23" @default.
• W2775773035 title "Real-time monitoring of charge-pumping process for SiO<inf>2</inf>/Si interface defect analysis" @default.
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• W2775773035 doi "https://doi.org/10.1109/qir.2017.8168450" @default.
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