FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2777660239> ?p ?o ?g. }

• W2777660239 abstract "The influence of deposition temperature on the structural, chemical, and electrical properties of atomic layer deposition (ALD)-Al2O3 thin films is investigated. ALD-Al2O3 films were deposited on p-type Ge substrates at 80, 150, 200, 250, and 300 °C. The atomic force microscopy analysis reveals smooth and cohesive films with extremely low roughness (0.2–0.6) nm at 150, 200, 250, and 300 °C. On the contrary, Al2O3 films deposited at the lowest available deposition temperature (80 °C) exhibit holes and aggregates implying a nonhomogeneous deposition. The x-ray photoelectron spectroscopy (XPS) analysis indicates the presence of stoichiometric Al2O3 films at all deposition temperatures. The calculated thickness from the analysis of XPS spectra seems to be in good agreement with the ALD nominal thickness for the films deposited at all deposition temperatures except the one of 80 °C. Transmission electron microscopy (TEM) analysis reveals a flat interface between Al2O3 and p-Ge in an atomic level. In addition, TEM and XPS analyses indicate the absence of any oxidized interlayer between p-Ge and Al2O3 films. Furthermore, C-V, G-V, C-f, G-f, and J-V measurements were performed in order to study the electrical properties and evaluate the density of interfacial traps (Dit) of the structures prior and following forming gas annealing procedure. Forming gas annealing clearly improves the electrical response of all tested structures, as expected, by reducing significantly the “streching out” effect and the frequency dispersion at the depletion regime. Leakage currents and Dit in the order of 10−4 A/cm2 (for applied voltage 1 V) and 1011 eV−1 cm−2, respectively, were measured-calculated for all tested structures." @default.
• W2777660239 created "2018-01-05" @default.
• W2777660239 creator A5000954311 @default.
• W2777660239 creator A5012148705 @default.
• W2777660239 creator A5022541547 @default.
• W2777660239 creator A5038723532 @default.
• W2777660239 creator A5045370741 @default.
• W2777660239 creator A5048962336 @default.
• W2777660239 creator A5052135926 @default.
• W2777660239 creator A5059507549 @default.
• W2777660239 creator A5066185835 @default.
• W2777660239 creator A5070989714 @default.
• W2777660239 creator A5071752083 @default.
• W2777660239 date "2017-12-27" @default.
• W2777660239 modified "2023-10-10" @default.
• W2777660239 title "Influence of the atomic layer deposition temperature on the structural and electrical properties of Al/Al₂O₃/p-Ge MOS structures" @default.
• W2777660239 cites W1524924195 @default.
• W2777660239 cites W1612849470 @default.
• W2777660239 cites W1964661285 @default.
• W2777660239 cites W1967867607 @default.
• W2777660239 cites W1972650102 @default.
• W2777660239 cites W1974396913 @default.
• W2777660239 cites W1976085046 @default.
• W2777660239 cites W1977525553 @default.
• W2777660239 cites W1981375431 @default.
• W2777660239 cites W1982701132 @default.
• W2777660239 cites W1994806764 @default.
• W2777660239 cites W1999814578 @default.
• W2777660239 cites W2000580049 @default.
• W2777660239 cites W2000828913 @default.
• W2777660239 cites W2003499467 @default.
• W2777660239 cites W2003645630 @default.
• W2777660239 cites W2004209068 @default.
• W2777660239 cites W2004625258 @default.
• W2777660239 cites W2007386293 @default.
• W2777660239 cites W2009569680 @default.
• W2777660239 cites W2016162937 @default.
• W2777660239 cites W2017112530 @default.
• W2777660239 cites W2028388855 @default.
• W2777660239 cites W2029407263 @default.
• W2777660239 cites W2029944930 @default.
• W2777660239 cites W2031495474 @default.
• W2777660239 cites W2038937540 @default.
• W2777660239 cites W2039611066 @default.
• W2777660239 cites W2047205370 @default.
• W2777660239 cites W2056440608 @default.
• W2777660239 cites W2062619010 @default.
• W2777660239 cites W2066245423 @default.
• W2777660239 cites W2107804777 @default.
• W2777660239 cites W2107840696 @default.
• W2777660239 cites W2111647995 @default.
• W2777660239 cites W2121043652 @default.
• W2777660239 cites W2122875263 @default.
• W2777660239 cites W2130028915 @default.
• W2777660239 cites W2139651222 @default.
• W2777660239 cites W2143358323 @default.
• W2777660239 cites W2145865414 @default.
• W2777660239 cites W2153595058 @default.
• W2777660239 cites W2158932701 @default.
• W2777660239 cites W2215865826 @default.
• W2777660239 cites W2314133987 @default.
• W2777660239 cites W2509891156 @default.
• W2777660239 cites W2598373698 @default.
• W2777660239 cites W2602229568 @default.
• W2777660239 cites W2766729607 @default.
• W2777660239 cites W3104562500 @default.
• W2777660239 doi "https://doi.org/10.1116/1.5003375" @default.
• W2777660239 hasPublicationYear "2017" @default.
• W2777660239 type Work @default.
• W2777660239 sameAs 2777660239 @default.
• W2777660239 citedByCount "5" @default.
• W2777660239 countsByYear W27776602392020 @default.
• W2777660239 countsByYear W27776602392021 @default.
• W2777660239 countsByYear W27776602392022 @default.
• W2777660239 crossrefType "journal-article" @default.
• W2777660239 hasAuthorship W2777660239A5000954311 @default.
• W2777660239 hasAuthorship W2777660239A5012148705 @default.
• W2777660239 hasAuthorship W2777660239A5022541547 @default.
• W2777660239 hasAuthorship W2777660239A5038723532 @default.
• W2777660239 hasAuthorship W2777660239A5045370741 @default.
• W2777660239 hasAuthorship W2777660239A5048962336 @default.
• W2777660239 hasAuthorship W2777660239A5052135926 @default.
• W2777660239 hasAuthorship W2777660239A5059507549 @default.
• W2777660239 hasAuthorship W2777660239A5066185835 @default.
• W2777660239 hasAuthorship W2777660239A5070989714 @default.
• W2777660239 hasAuthorship W2777660239A5071752083 @default.
• W2777660239 hasConcept C113196181 @default.
• W2777660239 hasConcept C127413603 @default.
• W2777660239 hasConcept C144082473 @default.
• W2777660239 hasConcept C146088050 @default.
• W2777660239 hasConcept C147789679 @default.
• W2777660239 hasConcept C151730666 @default.
• W2777660239 hasConcept C159985019 @default.
• W2777660239 hasConcept C171250308 @default.
• W2777660239 hasConcept C175708663 @default.
• W2777660239 hasConcept C185592680 @default.
• W2777660239 hasConcept C19067145 @default.
• W2777660239 hasConcept C192562407 @default.
• W2777660239 hasConcept C2777855556 @default.
• W2777660239 hasConcept C2816523 @default.

• next