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• W2777684893 abstract "In this paper, boron-doped indium-zinc-oxide (InZnO) thin-film transistors (BIZO TFTs) were fabricated by solution process. The electrical performance and stability under the negative bias illumination stress (NBIS) have been greatly improved by B doping. The BIZO TFT with 5 mol.% B doping ratio shows a superior electrical performance with a field-effect mobility of 10.15 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /V · s, a threshold voltage of 3.29 V, a subthreshold swing of 0.35 V/decade, and an ON/OFF ratio of 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>8</sup> . Furthermore, the 5 mol.% BIZO TFT shows only a -1.59 V shift of the threshold voltage, compared with a large negative shift of -4.24 V for pure IZO TFTs. The enhancement of electrical performance and stability under NBIS is due to the reduction of oxygen vacancies, which are suppressed by B doping. The density of states is calculated to further validate the improved electrical performance and NBIS stability of BIZO TFTs." @default.
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• W2777684893 date "2018-02-01" @default.
• W2777684893 modified "2023-10-12" @default.
• W2777684893 title "Enhanced Electrical Performance and Negative Bias Illumination Stability of Solution-Processed InZnO Thin-Film Transistor by Boron Addition" @default.
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• W2777684893 doi "https://doi.org/10.1109/ted.2017.2779743" @default.
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