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• W2777739910 abstract "We present a new bonding process for gallium nitride (AlGaN/GaN) devices from Si onto diamond substrates. In our technology AlGaN/GaN-devices are transferred from silicon (Si) onto single (SCD) and polycrystalline diamond (PCD) substrates by van der Waals bonding. Load-pull measurements on Si and sCd at 3 GHz and 50 V drain bias show comparable power-added-efficiency (PAE) and output power (Pout) levels. Also, comparisons of 2×1 mm GaN-diodes on Si, PCD, and SCD reveal significantly increased power levels. In summary, we show a promising new GaN-on-diamond technology for future high-power, microwave GaN-device applications." @default.
• W2777739910 created "2018-01-05" @default.
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• W2777739910 date "2017-10-01" @default.
• W2777739910 modified "2023-09-26" @default.
• W2777739910 title "Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding" @default.
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• W2777739910 doi "https://doi.org/10.23919/eumic.2017.8230651" @default.
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