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- W2777962702 abstract "espanolLos detectores de eficiencia cuantica predecible (PQED) han demostrado su potencial para llegar a desarrollar un patron primario de flujo radiante, basado en el efecto fotoelectrico del silicio como material semiconductor. Hasta ahora, la eficiencia cuantica interna (IQE) de un radiometro PQED se determina, a partir de parametros de diseno y montaje de los dos fotodiodos que lo constituyen, mediante programas de simulacion de dispositivos semiconductores. Este trabajo presenta como alternativa un modelo analitico, basado en el estudio de la fotocorriente de Ferrero et al., que considera las distintas regiones internas del fotodiodo y las caracteristicas del haz incidente. La IQE aumenta con el voltaje de polarizacion inversa aplicado al PQED y el tiempo de vida de los portadores de carga, mientras que disminuye al aumentar la velocidad de recombinacion de superficie y la concentracion de impurezas dopantes en el sustrato. Los resultados de IQE obtenidos con el modelo y las simulaciones son similares para longitudes de onda entre 400 nm y 700 nm. Ademas, el modelo analitico predice un aumento de la IQE con la irradiancia a partir de ciertos niveles, consecuencia de la aparicion de suprarresponsividad en los fotodiodos. EnglishThe potential of predictable quantum efficient detectors (PQEDs) as optical radiant power primary standard, based on photoelectric effect in silicon semiconductor, has been proved. Until now, the internal quantum efficiency (IQE) of a PQED is only predicted, from the design and setup parameters of the two photodiodes of this radiometer, by means of simulation software for semiconductor devices. This work presents, as alternative method, an analytical model based on Ferrero et al. photocurrent analysis, which considers the different internal regions of the photodiode and the characteristics of the incident beam. The IQE grows with the reverse bias voltage applied to the photodiodes and the lifetime of the charge carriers in the bulk, while IQE decreases when the surface recombination velocity and the doping concentration of the substrate are increased. The IQE results of the analytical model are similar to simulations for wavelengths between 400 nm and 700 nm. Moreover, the analytical model predicts an increase of the IQE with the irradiance, at certain levels of optical power due to the supra-responsivity of the photodiode." @default.
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- W2777962702 date "2017-12-28" @default.
- W2777962702 modified "2023-10-16" @default.
- W2777962702 title "Preliminary results of an analytical model to determine the internal quantum efficiency of a predictable quantum efficient detector" @default.
- W2777962702 doi "https://doi.org/10.7149/opa.50.4.49027" @default.
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