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- W2779674219 abstract "Result of photoluminescence investigation of thin films of GaNAs compound, obtained by nitridation of porous GaAs substrate are presented in the article. It has been found possible to control of arsenic and nitrogen concentration in GaNAs by optimizing the condition of annealing in atomic nitrogen. Cubic GaN film were obtained on por-GaAs/GaAs(111) substrate, that extends possibility of growth GaN cubic on GaAs substrate. Effect of changing of the energy of the band-edge luminescence of GaNAs from 2.63 to 2.44 eV with increasing arsenic concentration from 1 to 10% are discussed. The dependences of lattice type of GaN films on porosity of por-GaAs/GaAS(111) are reveals. It has been determined, that using porous GaAs substrate with porosity of 30% favours formation of cubic GaN. Photoluminescence peak at 3.42 eV (at 77 K) is attributed to polycrystalline hexagonal inclusion in cubic GaN." @default.
- W2779674219 created "2018-01-05" @default.
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- W2779674219 date "2008-05-27" @default.
- W2779674219 modified "2023-09-25" @default.
- W2779674219 title "PROPERTIES OF GaNAs AND GaN, OBTAINED BY NITRIDATION OF POROUS GaAs SUBSTRATE" @default.
- W2779674219 doi "https://doi.org/10.18524/1815-7459.2008.2.114588" @default.
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