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• W2780232202 abstract "A Through Silicon Via (TSV) is a key component for 3D integrated circuit stacking technology, and the diameter of a TSV keeps scaling down to reduce the footprint in silicon. The TSV aspect ratio, defined as the TSV depth/diameter, tends to increase consequently. Starting from the aspect ratio of 10, to improve the TSV sidewall coverage and reduce the process thermal budget, the TSV dielectric liner deposition process has evolved from sub-atmospheric chemical vapour deposition to plasma-enhanced atomic layer deposition (PE-ALD). However, with this change, a strong negative shift in the flatband voltage is observed in the capacitance-voltage characteristic of the vertical metal-oxide-semiconductor (MOS) parasitic capacitor formed between the TSV copper metal and the p-Si substrate. And, no shift is present in planar MOS capacitors manufactured with the same PE-ALD oxide. By comparing the integration process of these two MOS capacitor structures, and by using Elastic Recoil Detection to study the elemental composition of our films, it is found that the origin of the negative flatband voltage shift is the positive charge trapping at the Si/SiO2 interface, due to the positive PE-ALD reactants confined to the narrow cavity of high aspect ratio TSVs. This interface charge trapping effect can be effectively mitigated by high temperature annealing. However, this is limited in the real process due to the high thermal budget. Further investigation on liner oxide process optimization is needed." @default.
• W2780232202 created "2018-01-05" @default.
• W2780232202 creator A5017263117 @default.
• W2780232202 creator A5017425497 @default.
• W2780232202 creator A5018617418 @default.
• W2780232202 creator A5022317604 @default.
• W2780232202 creator A5024313018 @default.
• W2780232202 creator A5027473851 @default.
• W2780232202 creator A5051712390 @default.
• W2780232202 creator A5071982089 @default.
• W2780232202 creator A5080591280 @default.
• W2780232202 date "2017-12-28" @default.
• W2780232202 modified "2023-10-16" @default.
• W2780232202 title "Interface charge trapping induced flatband voltage shift during plasma-enhanced atomic layer deposition in through silicon via" @default.
• W2780232202 cites W1824311929 @default.
• W2780232202 cites W1970819096 @default.
• W2780232202 cites W1972300090 @default.
• W2780232202 cites W1973561324 @default.
• W2780232202 cites W1997913942 @default.
• W2780232202 cites W1998290008 @default.
• W2780232202 cites W2000605187 @default.
• W2780232202 cites W2027872603 @default.
• W2780232202 cites W2029941668 @default.
• W2780232202 cites W2038012728 @default.
• W2780232202 cites W2044887381 @default.
• W2780232202 cites W2046139226 @default.
• W2780232202 cites W2054917994 @default.
• W2780232202 cites W2063981882 @default.
• W2780232202 cites W2078492284 @default.
• W2780232202 cites W2094529056 @default.
• W2780232202 cites W2094613722 @default.
• W2780232202 cites W2104516739 @default.
• W2780232202 cites W2121007654 @default.
• W2780232202 cites W2149248689 @default.
• W2780232202 cites W2158932701 @default.
• W2780232202 cites W2163419003 @default.
• W2780232202 cites W2575200341 @default.
• W2780232202 cites W4254690702 @default.
• W2780232202 doi "https://doi.org/10.1063/1.5001026" @default.
• W2780232202 hasPublicationYear "2017" @default.
• W2780232202 type Work @default.
• W2780232202 sameAs 2780232202 @default.
• W2780232202 citedByCount "1" @default.
• W2780232202 countsByYear W27802322022018 @default.
• W2780232202 crossrefType "journal-article" @default.
• W2780232202 hasAuthorship W2780232202A5017263117 @default.
• W2780232202 hasAuthorship W2780232202A5017425497 @default.
• W2780232202 hasAuthorship W2780232202A5018617418 @default.
• W2780232202 hasAuthorship W2780232202A5022317604 @default.
• W2780232202 hasAuthorship W2780232202A5024313018 @default.
• W2780232202 hasAuthorship W2780232202A5027473851 @default.
• W2780232202 hasAuthorship W2780232202A5051712390 @default.
• W2780232202 hasAuthorship W2780232202A5071982089 @default.
• W2780232202 hasAuthorship W2780232202A5080591280 @default.
• W2780232202 hasConcept C113196181 @default.
• W2780232202 hasConcept C133386390 @default.
• W2780232202 hasConcept C159985019 @default.
• W2780232202 hasConcept C171250308 @default.
• W2780232202 hasConcept C185592680 @default.
• W2780232202 hasConcept C192562407 @default.
• W2780232202 hasConcept C2777855556 @default.
• W2780232202 hasConcept C2779227376 @default.
• W2780232202 hasConcept C36003996 @default.
• W2780232202 hasConcept C43617362 @default.
• W2780232202 hasConcept C49040817 @default.
• W2780232202 hasConcept C544956773 @default.
• W2780232202 hasConcept C57410435 @default.
• W2780232202 hasConcept C69544855 @default.
• W2780232202 hasConceptScore W2780232202C113196181 @default.
• W2780232202 hasConceptScore W2780232202C133386390 @default.
• W2780232202 hasConceptScore W2780232202C159985019 @default.
• W2780232202 hasConceptScore W2780232202C171250308 @default.
• W2780232202 hasConceptScore W2780232202C185592680 @default.
• W2780232202 hasConceptScore W2780232202C192562407 @default.
• W2780232202 hasConceptScore W2780232202C2777855556 @default.
• W2780232202 hasConceptScore W2780232202C2779227376 @default.
• W2780232202 hasConceptScore W2780232202C36003996 @default.
• W2780232202 hasConceptScore W2780232202C43617362 @default.
• W2780232202 hasConceptScore W2780232202C49040817 @default.
• W2780232202 hasConceptScore W2780232202C544956773 @default.
• W2780232202 hasConceptScore W2780232202C57410435 @default.
• W2780232202 hasConceptScore W2780232202C69544855 @default.
• W2780232202 hasIssue "24" @default.
• W2780232202 hasLocation W27802322021 @default.
• W2780232202 hasOpenAccess W2780232202 @default.
• W2780232202 hasPrimaryLocation W27802322021 @default.
• W2780232202 hasRelatedWork W1966455536 @default.
• W2780232202 hasRelatedWork W1993496899 @default.
• W2780232202 hasRelatedWork W2002504916 @default.
• W2780232202 hasRelatedWork W2069657369 @default.
• W2780232202 hasRelatedWork W2071712540 @default.
• W2780232202 hasRelatedWork W2107741794 @default.
• W2780232202 hasRelatedWork W2139871202 @default.
• W2780232202 hasRelatedWork W2909146734 @default.
• W2780232202 hasRelatedWork W3175146547 @default.
• W2780232202 hasRelatedWork W4205716096 @default.
• W2780232202 hasVolume "122" @default.
• W2780232202 isParatext "false" @default.
• W2780232202 isRetracted "false" @default.
• W2780232202 magId "2780232202" @default.

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