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- W2782223637 abstract "Strain-engineered two-dimensional (2D) SiGe is predicted to be a topological insulator (TI) based on first-principle calculations. The dynamical and thermal stabilities were ascertained through phonon spectra and ab initio molecular dynamics simulations. 2D SiGe remains dynamically stable under tensile strains of 4 and 6%. A band inversion was observed at the Γ-point with a band gap of 25 meV for 6% strain due to spin–orbit coupling interactions. Nontrivial of the TI phase was determined by its topological invariant (υ = 1). For SiGe nanoribbon with edge states, the valence band and conduction band cross at the Γ-point to create a topologically protected Dirac cone inside the bulk gap. We found that hexagonal boron nitride (h-BN) with high dielectric constant and band gap can be a very stable support to experimentally fabricate 2D SiGe as the h-BN layer does not alter its nontrivial topological character. Unlike other heavy-metal-based 2D systems, because SiGe has a sufficiently large gap, it can be utilized for spintronics and quantum spin Hall-based applications under ambient condition." @default.
- W2782223637 created "2018-01-12" @default.
- W2782223637 creator A5068360992 @default.
- W2782223637 creator A5072712242 @default.
- W2782223637 date "2018-01-02" @default.
- W2782223637 modified "2023-10-11" @default.
- W2782223637 title "Topological Insulator in Two-Dimensional SiGe Induced by Biaxial Tensile Strain" @default.
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- W2782223637 doi "https://doi.org/10.1021/acsomega.7b01957" @default.
- W2782223637 hasPubMedCentralId "https://www.ncbi.nlm.nih.gov/pmc/articles/6641324" @default.
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- W2782223637 hasPublicationYear "2018" @default.
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