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• W2782354497 abstract "• Mg 2 Si can be grown by fast (100 nm/s) deposition of Mg on Si(111) at 365–609 °C. • A simple way to study temperature-dependent processes in one experiment is shown. • Analysis of the Mg 2 Si growth process at high temperature is given. • High deposition rate is the crucial requirement for Mg 2 Si growth at high temperatures." @default.
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• W2782354497 date "2018-05-01" @default.
• W2782354497 modified "2023-10-01" @default.
• W2782354497 title "Formation of Mg2Si at high temperatures by fast deposition of Mg on Si(111) with wedge-shaped temperature distribution" @default.
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• W2782354497 doi "https://doi.org/10.1016/j.apsusc.2017.12.237" @default.
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