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- W2783013708 abstract "Abstract Transparent p‐type conductive γ‐CuI thin films typically exhibit unexpectedly high hole mobilities in the range of 10 cm 2 V −1 s −1 even when heavily textured. To explain this phenomenon, the transport properties of such thin films are investigated. The temperature‐dependent resistivities of the textured (111)‐oriented films with different carrier concentration are fitted using the fluctuation‐induced tunneling conductivity (FITC) model in series with a power law. The FITC model describes barriers at the grain boundaries whereas the power law considers the scattering in the metallic interior of the grains. Magnetoresistance measurements performed on a reactively DC‐sputtered thin film at low temperatures ( T < 8 K) suggest a 2D weak antilocalization effect with phase coherence lengths of about 50 nm. This is corroborated by a typical logarithmic temperature dependence of the zero‐field conductance. An n‐type inversion layer or a defect band at the interfaces of the grains as origin of the 2D carrier system and the barriers at the grain boundaries is proposed. This leads to a conclusive description of the electrical transport properties of γ‐CuI thin films and explains the high hole mobilities which are due to a suppressed backscattering at the grain boundaries in the presence of tunneling channels." @default.
- W2783013708 created "2018-01-26" @default.
- W2783013708 creator A5002271787 @default.
- W2783013708 creator A5011161429 @default.
- W2783013708 creator A5026368462 @default.
- W2783013708 creator A5028147983 @default.
- W2783013708 creator A5030665527 @default.
- W2783013708 creator A5066056154 @default.
- W2783013708 creator A5074656283 @default.
- W2783013708 creator A5090528415 @default.
- W2783013708 date "2018-01-15" @default.
- W2783013708 modified "2023-10-14" @default.
- W2783013708 title "Suppression of Grain Boundary Scattering in Multifunctional p-Type Transparent γ-CuI Thin Films due to Interface Tunneling Currents" @default.
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