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• W2783024872 abstract "The upgrade of the LHC to the High Luminosity LHC will challenge the silicon strip detector performance with high fluence and long operation time. Sensors have been designed and tests on charge collection and electrical performance have been carried out in order to evaluate their behaviour. Besides that, it is important to understand and predict the long-term evolution of the sensor properties. In this work, detailed studies on the annealing behaviour of ATLAS12 strip sensors designed by the ITK Strip Sensor Working Group and irradiated from 5×1013neqcm−2 to 2×1015neqcm−2 are presented. Systematic charge collection and leakage current measurements have been carried out during the annealing process until break-down or the appearance of charge multiplication. The annealing was carried out, separating the sensors into two groups being either annealed at 23 °C or 60 °C. Sensors showing charge multiplication have been then kept at high voltage for a long time in order to monitor their stability. The difference in the annealing behaviour between the two temperatures has been analysed and compared to similar measurements on n-type sensors and with a theoretical model. From the impedance measurements for the samples irradiated to low fluences it was possible to extract the effective doping concentration. This was compared to similar measurements on n-type sensors and with a theoretical model." @default.
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• W2783024872 date "2019-04-01" @default.
• W2783024872 modified "2023-10-17" @default.
• W2783024872 title "Annealing studies of irradiated p-type sensors designed for the upgrade of ATLAS phase-II strip tracker" @default.
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• W2783024872 doi "https://doi.org/10.1016/j.nima.2018.10.014" @default.
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