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- W2783124366 abstract "Abstract This work proposed a smart approach to fabricate highly nonlinear SnOx-Ta2O5 thin film varistors. During processing, tin oxide films in nanoscaled thickness were firstly deposited onto electrically conducting silicon wafers through radio frequency magnetron sputtering a sintered tin oxide ceramic target; and then, the obtained films were hot-dipped in Ta2O5 powder in a Muffle oven for 60 min at different temperatures. With the hot-dipping temperature increased from 300 to 800 °C, the nonlinear coefficient of the samples increased first and then decreased, reaching the maximum of 16.8 at 600 °C, which is a record in all the reported SnO2-based varistors and comparable with those of the most extensively investigated and commonly commercially applied ZnO-based ceramic varistors. Correspondingly, the leakage current decreased first and then increased, obtaining the minimum of 4.1 mA/cm2. Besides, the breakdown electric field increased first and then decreased, presenting the maximum of 0.0313 V/nm. Such nanoscaled thin film varistors would be promising in electrical and electronic devices working in low-voltage." @default.
- W2783124366 created "2018-01-26" @default.
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- W2783124366 date "2018-04-01" @default.
- W2783124366 modified "2023-10-11" @default.
- W2783124366 title "Highly nonlinear varistors fabricated by hot-dipping tin oxide thin films in Ta2O5 powder at different temperatures" @default.
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- W2783124366 doi "https://doi.org/10.1016/j.ceramint.2018.01.115" @default.
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