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• W2783187026 startingPage "023503" @default.
• W2783187026 abstract "The effects of ionizing radiation on β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as 1.6 MGy(SiO2) was demonstrated for the bulk Ga2O3 channel by virtue of weak radiation effects on the MOSFETs' output current and threshold voltage. The MOSFETs remained functional with insignificant hysteresis in their transfer characteristics after exposure to the maximum cumulative dose. Despite the intrinsic radiation hardness of Ga2O3, radiation-induced gate leakage and drain current dispersion ascribed respectively to dielectric damage and interface charge trapping were found to limit the overall radiation hardness of these devices." @default.
• W2783187026 created "2018-01-26" @default.
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• W2783187026 date "2018-01-08" @default.
• W2783187026 modified "2023-09-30" @default.
• W2783187026 title "Radiation hardness of <i>β</i>-Ga₂O₃ metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation" @default.
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• W2783187026 doi "https://doi.org/10.1063/1.5017810" @default.
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