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• W2783190675 abstract "We report the morphological and compositional characteristics of Er-doped GaN grown by MBE on Si(111) substrates and their effect on optical properties. The GaN was grown by molecular beam epitaxy using solid sources (for Ga and Er) and a plasma gas source for N 2 . The films emit by photoexcitation in the visible and near infrared wavelengths from the Er atomic levels. The morphology of the GaN:Er films was examined by AFM. Composition was determined by SIMS depth profiling that revealed a large Er concentration at 4.5×10 21 atoms/cm 3 accompanied by a high oxygen impurity concentration." @default.
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• W2783190675 date "1999-01-01" @default.
• W2783190675 modified "2023-09-27" @default.
• W2783190675 title "Optical and Structural Properties of Er3+-Doped GaN Grown by MBE" @default.
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• W2783190675 doi "https://doi.org/10.1557/s1092578300002854" @default.
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