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- W2783234868 abstract "In this paper, we present a detailed study of high quality (110) ZnO films, epitaxially grown on R-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The epitaxial relationships are (11 0 ) ZnO//( 01 2 ) Al 2 O 3 and [0001] ZnO//[0 11] Al 2 O 3 as confirmed by X-ray diffraction (θ-2θ, and ϕ-scan) and high-resolution cross-sectional transmission electron microscopy (HR-TEM). Low temperature photoluminescence (PL) indicates the ZnO thin films are almost strain free. Optical absorption and reflection measurements with linearly polarized light indicate a strong optical anisotropy. The polarization rotation towards the C-axis associated with the optical anisotropy is utilized to demonstrate an optically addressed ultra-fast, ultraviolet light modulator." @default.
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- W2783234868 date "1999-01-01" @default.
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- W2783234868 title "Properties of Epitaxial Zno Thin Films for Gan and Related Applications" @default.
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